V.D295 — CPL Mapping of τ-EoS

CPL parametrization: w₀ = ι_τ³−1 ≈ −0.960, wₐ > 0 (defect depletion). DESI DR2: (−0.75±0.11, −0.99±0.48). τ closer to DESI than ΛCDM on w₀; tension ~2σ.